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IXTP 1R6N50P
IXTY 1R6N50P
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
TO-220 (IXTP) Outline
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
V DS = 20 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D =0.5 I D25
R G = 50 Ω (External)
0.7
1.3
140
20
2.6
20
26
45
S
pF
pF
pF
ns
ns
ns
t f
Q g(on)
Q gs
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
23
3.9
1.4
ns
nC
nC
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
Q gd
1.3
nC
R thJC
R thJS
(TO-220)
0.25
2.9
° C/W
° C/W
Source-Drain Diode
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Symbol
Test Conditions
Min. Typ. Max.
I S
V GS = 0 V
1.6
A
TO-252 AA (IXTY) Outline
I SM
V SD
t rr
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 1.6 A, -di/dt = 100 A/ μ s
400
5.0
1.5
A
V
ns
V R = 100V
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
2.19
0.89
0
0.64
0.76
5.21
0.46
0.46
5.97
4.32
6.35
4.32
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
0.086
0.035
0
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64
0.89
2.54
1.02
1.27
2.92
0.025
0.035
0.100
0.040
0.050
0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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